| 摘要 |
PURPOSE:To make uniform the performance of memory element and to increase the reliability, by providing the channel stopper at the location having a given relation with the source and drain with self-alignment and by reducing the leakage current. CONSTITUTION:The double layered mask of oxide film and nitride film is provided on the N type Si substrate 11, and the source 11s, drain 11d, channel 11c, and channel stopper 11 are selectively formed to form the oxide film 13 in the opening. Next, the N<-> channel stopper 15 is provided at the mask 14 opened selectively for the channel stopper and it is covered with the oxide film 16. By removing the mask 12, it is covered with BSG 17, the layer 17a is selectively opened with the resist mask window 18a to form the oxide film 19 and the P<+> diffusion layers 20 and 21 from the layer 11 on the substrate exposing surface. Further, the selective opening 19a is made on the film 19 with the resist mask 22, it is covered with the oxide film 23, to constitute the double layer of nitride layer 24 only for the opening 19a. Finally, the Al gate electrode 25 is formed for the film 24 on the films 9 and 23 of the gate section. The channel stopper is in agreement with the side ridge of the film 23 of the memory section Ca to block the leakage current, and the dielectric strength is not lowered. |
