| 摘要 |
PROBLEM TO BE SOLVED: To raise reproducibility of wafer bonding and to improve yield of a semiconductor device, related to a semiconductor device used for various electronic equipment, a semiconductor wafer which is a material for it, and their manufacturing method. SOLUTION: Related to a device structure, a plurality of wafers are pasted together with at least one layer being Si, and the Si layer bonded to a wafer flat surface is inclined from (III) surface toward [1, 1, -2]. With this configuration, multi-atom layer step of about 3 nm in height are present in parallel each other in the Si wafer before bonding in micro size, and the step acts as a minute degassing hole in nanometer size at the stacked interface, so the gas generated at the interface in thermal process for raising adhesiveness is released effectively outside a wafer. As a result, a void which is caused when a gas is not released entirely does not occur at the interface, for raised representability for bonding and improved device yield.
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