COMPOUND SEMICONDUCTOR WAFER AND MANUFACTURE THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a compound semiconductor wafer wherein a semiconductor device of high gate breakdown voltage is manufactured. SOLUTION: A compound semiconductor substrate is etched and acid-cleaned as a pre-process for forming an epitaxial growth layer on the surface of the compound semiconductor substrate, and the compound semiconductor substrate which is pre-processed is placed in a gas comprising carbon atom such as atmosphere, carbon dioxide, methane gas, so that the accumulated layer of carbon atom is formed on the surface of the compound semiconductor substrate before epitaxial growth.