| 摘要 |
<p>PURPOSE:To obtain both the steady ohmic characteristics and excellent luminous characteristics by utilizing the fact that the SiO2 film has a reduced effect as the diffusion mask to Zn and can function well as the diffusion mask to the V-group element. CONSTITUTION:N-type GaAsP epitaxial layer 4 is grown on N-type GaP substrate 5, and then SiO2 film 2 is grown 3000 Angstrom through the CVD methode. Then the electrode pattern of film 2 is removed by exfoliation. The closed tube diffusion is performed for 1H and at 800 deg.C along with 0.2mg Zn and 3.5mg As per 1cc of the sealing capacity as an example. As a result, the diffusion depth of 6mum can be secured at the areas under the SiO2 film and the SiO2 exfoliation pattern. Then Al electrode 1 is formed at the SiO2 exfoliation pattern part, and the SiO2 film is exfoliated completely to then form surface electrode AuSi6 and Au7 each.</p> |
