| 摘要 |
PROBLEM TO BE SOLVED: To obtain a photoresist stripping material composition which is rapidly and easily stripping the photoresist fluorescent lamp applied on an inorganic substrate, the photoresist remaining after etching and photoresist residues and does not corrode a variety of semiconductor layer materials, wiring material, insulating materials, etc., at all. SOLUTION: This photoresist stripper composition consists of (1) a nitrogenous organic hydroxyl component, (2) the alkylene glycol monoalkylether expressed by general formula HO-(CpH2pO)q-R (R denotes 1-4 alkyl group; p denotes 2 or 3; q denotes 1, 2 or 3, respectively), (3) saccharides or glycitol, (4) a phosphorus-containing compound and (5) water. This method for stripping the photoresist uses the composition described above. |
