| 摘要 |
PURPOSE:To avoid the contamination as well as to increase both the yield and the reliability by carrying out continuously in the vacuum state the processes of the electrode formation from the lower junction to the upper junction with no photo etching process. CONSTITUTION:First wiring layer 2 of the lead is provided to Si substrate 1, and only the junction scheduled region is exposed via resist mask 3-1. Then lower junction electrode 6 of the superconductor (lead), tunnel layer 4 and upper junction electrode 7 are laminated each through evaporation. The tunnel layer is the surface oxide film of electrode 6 or the evaporation film of other insulator and semiconductor. Mask 3-1 is then removed and insulator 8 is coated with an aperture drilled to layer 4. Then lead second wiring layer 5 is evaporated on part of layer 8 as well as on electrode 7 via mask 3-2, and then mask 3-2 is removed to complete the manufacture. In this method, the surfaces of the upper and lower junction electrodes are never contaminated with no evil effect given to formation of the tunnel layer. This effect is more enhanced is the oxide film of the lower junction electrode is used to the tunnel layer. |
