Method of making attenuating phase-shifting mask using different exposure doses

摘要

A mask and method of forming a mask for forming electrode patterns having both closely spaced lines and lines with greater separation between them. The mask uses a pattern formed using attenuating phase shifting material for the region of the mask with lines with greater separation and a binary pattern formed using opaque material in the region of the mask with closely spaced lines. The mask design data is used to determine the mask regions using attenuating phase shifting material and the regions of the mask using a binary pattern. The mask is illuminated using off axis illumination, preferably quadrapole off axis illumination. The mask is formed using electron beam exposure of a resist using more than one exposure dose so that only one layer of resist is required to form the two regions of the mask one using attenuating phase shifting material and one using a binary pattern.