| 发明名称 |
Method of making a bipolar transistor with high-low emitter impurity concentration |
| 摘要 |
An improved bipolar transistor including an emitter region having a relatively high-impurity-concentration portion separated from the base region of the transistor by a significantly lower-impurity-concentration portion disposed therebetween comprises a graded impurity concentration in the low-impurity-concentration portion with the lowest-impurity-concentration section thereof being disposed adjacent the base region.
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| 申请公布号 |
US4178190(A) |
申请公布日期 |
1979.12.11 |
| 申请号 |
US19780950068 |
申请日期 |
1978.10.10 |
| 申请人 |
RCA CORP |
发明人 |
POLINSKY, MURRAY A |
| 分类号 |
H01L21/225;H01L21/8222;H01L27/082;H01L29/08;H01L29/732;(IPC1-7):H01L29/72;H01L21/00;H01L29/02 |
主分类号 |
H01L21/225 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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