| 摘要 |
PURPOSE:To obtain the electrode of stable ohmic contact and excellent bonding, by depositing Au-Zn alloy layer on P type GaP, and performing heat treatment under Ar at 460 to 550 deg.C. CONSTITUTION:On the n type GaP substrate 11, n tupe GaP 11a, P type GaP 12 are sequentially formed epitaxially, on the layer 12, Au layer 24 is laminated about 600Angstrom deep and Au-Zn layer 24a about 2.5 mum deep, and Zn is included in the layer 24a in about 130 mug/cm<2>. The Au-Si layer 15 and Au layer 15a are formed on the substrate 11. Next, alloying is made under Ar at about 500 deg.C for 5 to 20 minutes to form ohmic contact. The electrode at p type layer thus obtained obtains the ohmic contact less than 30 ohms in contact resistance and the bonding of the lead 14b is stable. The Au layer 24 is effective even at 100Angstrom , Zn is easily reactive to Au, and Zn from the evaporation source forms alloy with Au immediately, a part of Ga contributes to alloying, to form ternary alloy to avoid peel off. |
