| 摘要 |
PURPOSE:To reduce the number of contacts by taking the substrate as the source and to increase the degree of integration, by obtaining sufficient gm, small junction capacitance and high dielectric strength, through the use of DSA technology to the stack gate type non-volatile memory device. CONSTITUTION:The N<-> epitaxial layer 28 is laminated on the N type substrate 27, and oxide film 32, nitride film 31, and oxide film 30 are laminated. The films 32 to 30 are opened, B diffusion layer 44 is formed, and field oxide film 43 and gate oxide film 39 are formed. The polycrystal Si floating gate is selectively formed, and the polycrystal Si control gate 42 is formed via the second gate oxide film 40. Next, ion injection is selectively made, and P layer 35 is formed deeper than the N<-> layer 28. The N<+> source 37 and drain 38 are formed inside and outside the layer 35, and the electrode 45 is attached. Since the N<-> layer 28 is in contact with the layer 35 being channel, the dielectric strength is high, junction capacitance is small, and since the current flows from the source 37 to the substrate 27, the source connection hole and electrode are unnecessary, to increase the degree of integration. |
