| 摘要 |
PURPOSE:To obtain an extremely-fine pattern by forming the 2nd layer for controlling a pattern interval on the 1st layer on the substrate where the pattern is formed and by sequentially etching the 2nd layer and 1st layer after providing a mask pattern. CONSTITUTION:On substrate 1, the 1st layer 2 of (d1) in thickness to be patterned is adhered and on it, the 2nd layer 3 of (d2) for pattern-interval control is bonded by stacking. In this case, the 2nd layer 3 should be made of a material which can be etched by ions faster than the 1st layer 2. Next, resists with an pattern interval of W1 are provided onto layer 3 and upper layer 3 and lower layer 2 are ion-etched in sequence. Consequently, re-sticking matter is deposited on the pattern flank and when etching conditions are represented by (alpha1) and (alpha2), pattern interval W2 after etching is expressed by W2=W1-(alpha1alpha1+alpha2alpha2), so that the pattern interval will be narrowed by alpha2alpha2. Therefore, a fine pattern can be obtained which surpasses the manufacture limit of a exposure mask and is suitable for a LSI. |
