| 摘要 |
PURPOSE:To increase the target voltage tolerance by laminating the material layer composed mainly of ZnO or CeO2, the material layer composed mainly of one of ZnS, ZnSe and CdS and the layer composed mainly of the mixed crystal of CdTe or ZnTe and CdTe respectively on the light transmissible substrate containing the transparent conducting film. CONSTITUTION:The light transmissible substrate containing the transparent conducting film is kept at 25-250 deg.C and then undergoes sputtering in the O2 gas in order to produce the film of 0.02-1mu thick and with the main component of ZnO. Then the film of about 0.02-0.5mu and composed mainly of ZnS is vacuum-evaporated at the substrate temperature of about 200 deg.C, and furthermore the thin film composed mainly of CdTe and then the thin film composed mainly of (ZnTe)0.99(In2Te3)0.01 are vacuum-evaporated sequentially in 0.1-2.5mu thick. After this, a treatment is given for 3 minutes to 3 hours in the vacuum or inactive gas and at 300-700 deg.C. The photoconductive element thus obtained is used for the pickup tube target, thus increasing the voltage tolerance with high efficiency in the practical use. |
