| 摘要 |
<p>PURPOSE:To obtain the junction part of a uniform shape and with no dislocation by giving the temperature decrement in steps until the PN junction is formed when the grown material is formed on the semiconductor substrate by the liquid-phase growing method with lowering of the temperature to form the PN junction. CONSTITUTION:N-type GaAs substrate 3 and solution 4 composed of Si, GaAs and Ga are put into boat 2. Boat 2 is then enclosed into quartz tube 1 and then heated up. Then tube 1 is tilted with decrement of the temperature, and thus solution 4 reaches substrate 3 to form the PN junction on substrate 3. In this case, the temperature program is set up in steps as shown in the diagram. In other words, the growing start temperature if first set at 900 deg.+ or -0.5 deg.C and maintained for 90 minutes, and then the temperature is lowered down by 1 deg.C every one minute until the growing finish temperature with substrate 3 being wetted with solution 4. This procedure is repeated for 180 minutes. In this way, no dislocation is caused at the PN junction part, thus enhancing greatly both the dielectric strength and the light emitting efficiency.</p> |
