SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PURPOSE:To constitute the sense amplifier of high performance without deteriorating the features of low power consumption, by adding the C-MOS transmission gate to the drain of C-MOS inverter. CONSTITUTION:When the input signal fed to the input terminal 11 is changed from low to high level, since the MOS transistor 16b of N channel has greater mutual conductance, low level is taken place to the drain immediately, to turn on the P channel MOS transistor 15c in the next stage totempole circuit. On the other hand, the drain level of the P channel MOS transistor 15a remains high in level since the mutual conductance of the transmission gate consisting of P, N channel MOS transistors 15b, 16b is small. Further, the output level of the next stage is changed from low to high level with the level of N, P channel MOS transistors 16b, 15a. As a result, the sense circuit is operative with small change in the input level.