发明名称 VACUUM DEPOSITION METHOD
摘要 PURPOSE:To form a high density diposited film with good adherence on a substrate made of substance of low heat resistance by carrying out deposition in a vacuum while irradiating the substrate with electromagnetic waves having specified energy. CONSTITUTION:In deposition of silicon oxide or the like on a substrate made of substance of low heat resistance, e.g. plastics, deposition is carried out in a vacuum while irradiating the substrate with electromagnetic waves having energy of 1-1X16<10> eV. By this method the adherence and density of a deposited film of silicon oxide or the like are raised. This method is applicable to a wide material range including a lens, glass and a plastic sheet.
申请公布号 JPS54152634(A) 申请公布日期 1979.12.01
申请号 JP19780061331 申请日期 1978.05.23
申请人 SUWA SEIKOSHA KK 发明人 TOMITA TADAHARU
分类号 C23C14/22;C23C14/24 主分类号 C23C14/22
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