| 摘要 |
PURPOSE:To improve light-emission efficiency by obtaining an ohmic contact coming in low-resistance contact, by using an alloy with Au, AgSn, etc., as principal constituents, containing a group III element and N-type impurities to 0.1 to 1.2 weight %, for an electrode of a N-type GaP crystal. CONSTITUTION:On N-type GaP substrate 11, P-type GaP layer 12 is grown to constitute a light-emitting diode; and ohmic electrode 11a is adhered to the entire reverse surface of substrate 11 and ohmic electrode 12a is also formed in a fixed region on layer 12. In this case, electrode 11a uses an alloy electrode material such as Au, Ag and Sn containing an group III element and N-type impurities of 0.1 to 1.2 weight %. Namely, an Au-Ge-In alloy, obtained by mixing Ge and In of 1 weigt % with Au of 98 weight %, is used to obtain an ohmic contact of approsimate 5X 10<-5>OMEGAcm. Then, an empty lattice point of group V atoms is made at the electrode formation part of substrate 11, which is filled with N-type impurities. |
