| 摘要 |
<p>The semiconductor (1) is sandwiched between contact electrodes (2, 3) with which is makes contact under pressure. Intermediate layers of highly conductive metal (4, 5) are placed between the semiconductor and the contact electrodes. The upper metal layer (4) has a collar (15) which encloses the contact electrode and prevents the layer from being displaced. The lower layer has a collar which fits the semiconductor element (14). The shaped parts of the collars (8, 9, 10) where the curvature is greatest, have a reduced thickness- approx. a half that of the contact surfaces. The edges of the metal layers (11, 12, 13) provide defined limits for the contact areas. The upper edge of the semiconductor element is protected and centred by means of an insulating paint (18).</p> |
