| 摘要 |
<p>PURPOSE:To produce a miniature and thin-gage semiconductor device without providing the anti-short insulator between the semiconductor element and the lead. CONSTITUTION:Epoxy resin 2 is laminated on substrate 1 of the polyimide resin, and then copper foil 4 is bonded after drilling aperture 15. Then hole 16 larger than semiconductor element 8 in the outer size is formed selectively to produce cantilever lead 5 at hole 15. Lead 5 is then gold-plated to be heat-bonded with electrode 9 of element 8. In such way, resin 2 is protruded over the aperture part to shorten substantially the length of the cantilever lead. As a result, the bending, the extension after connection and the resin overflow occurring at the resin sealing time can be prevented respectively.</p> |
