| 摘要 |
PURPOSE:To obtain an oscillation circuit which is self-actuated even if a direct resistance is increased for the purpose of reducing a penetrating current. CONSTITUTION:The source of P-channel transistor TP is connected to the high- potential VDD side and its drain is to the drain of N-channel transistor TN via resistances R1 and R2. The source of TN is connected to the low-potential VSS side, and its gate is connected to the gate of TP and also to the drain via resistance RF. As for input-output characteristics, selecting sufficiently-large resistances R1 and R2 for the purpose of reducing a penetrating current nearly flattens an output voltage around where the output voltage is inverted, but since a bias voltage applied to the gate is caused to approximate to the threshold voltage of Tnu by feedback resistance RF, operation point P at the time of an oscillation start is shifted from the flat part to where the gain is enough. Consequently, self-actuation becomes possible. |
