| 摘要 |
PURPOSE:To enhance the switching property of the transistor by connecting the equivalent diode element featuring a small amount of the foward voltage drop between the base and the emitter of the drive-step transistor. CONSTITUTION:Transistor Tr3 featuring the short circuit given between the collector and the base or between the base and the emitter is used as the equivalent diode element. This diode element is then connected between the base and the emitter of drive-step transistor Tr1 for Darlington transistor Tr1 and Tr2. In other words, the reverse connection is given to the equivalent diode element featuring a small amount of the forward voltage drop. As a result, the absorption effect can be increased to the residual carrier at the junction part, shortening the turn-off time of the Darlington transistor. Thus, the switching property can be enhanced at the high-speed operation time. |
