INSULATED GATE FIELD EFFECT TRANSISTOR,申请号JP19790055183-传众专利搜索

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发明名称	INSULATED GATE FIELD EFFECT TRANSISTOR
摘要
申请公布号	JPS54147787(A)	申请公布日期	1979.11.19
申请号	JP19790055183	申请日期	1979.05.04
申请人	RCA CORP	发明人	ANDORIYUUGOODON FURANSHISU DEI
分类号	H01L29/06;H01L29/41;H01L29/423;H01L29/78	主分类号	H01L29/06
代理机构		代理人
主权项
地址

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