NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE

摘要

A nitride-based semiconductor LED is provided to improve current spreading effect by applying current flowing from an n-type electrode to a p-type electrode through an n-type nitride semiconductor layer while using a current spreading layer formed between n-type nitride semiconductor layers wherein the current spreading layer directly comes in contact with the n-type electrode. A high-density n-type nitride semiconductor layer(130a) is formed on a substrate(110). A low-density n-type nitride semiconductor layer(130b) is formed in a predetermined region on the high-density n-type nitride semiconductor layer. An active layer(140) is formed on the low-density n-type nitride semiconductor layer. A p-type nitride semiconductor layer(150) is formed on the active layer. A p-type electrode(160) is formed on the p-type nitride semiconductor layer. An n-type electrode(170) is formed on the high-density n-type nitride semiconductor layer where the low-density n-type nitride semiconductor layer is not formed. The low-density n-type nitride semiconductor layer has a lower doping density than that of the high-density n-type nitride semiconductor layer.