| 摘要 |
PURPOSE:To make easy the bonding of high reliability, by forming the Ni thick film on the Cu frame, laminating metal film on the junction of the semiconductor pellet, increasing the temperature of the frame, and contacting Ge(Si or Sn) on the pellet electrode with Au. CONSTITUTION:On the Cu frame 5, the Ni thick film 6 of 2.5 to 5mu is plated, Au plating is made with the thickness more than 1.5 times the pellet area and more than 2.5mu, and the Cu frame is heated more than 356 deg.C (eutetic point between Au and Ge). The Ge layer 4 coated on the electrode of the GaAs pellet 1 is contacted with the Au layer of the frame and it is lightly depressed. Ge4 and Au7 are alloyed and the electrode 3 of pellet and the Cu frame are molten. With this method, without injuring the electric performance, highly reliable bonding can be made with good operationability. |
