| 摘要 |
PURPOSE:To increase the density of number of switching elements, by constituting the switching elements consisting of the video element with the MOS type FET having the drain toward a given direction. CONSTITUTION:The common drain region 8 of the MOSFET elements Y1 to Yn constituting the vertical video element address gate on the semiconductor substrate 1, and the gate electrodes 91 to 9n are respectively formed by diffusion. Further, the common drain region 10 of MOS type FET elements X1 to Xn constituting the horizontal video element address gate, gate electrodes 111 to 11m, and source regions 121 to 12m, are respectively formed by diffusion. Next, the N<+> type regions 131 to 13m being the source region of the elements Y1 to Ym and being the common drain region of the elements X1 to Xm, and the source regions 1411 to 14mm of each element are formed by diffusion. After that, the common gate electrodes 151 to 15m are provided toward vertical direction of the elements in matrix shape, the entire surface is covered with the SiO2 film 16, the window is opened, forming the charge collection electrodes 171 to 173. Further, on those, the photo conductive materials 19 to 21 and the transparent electrode 22 are coated with lamination. |
