发明名称 Plasma processing apparatus capable of adjusting pressure within processing chamber
摘要 A vacuum pump exhausts gas within the processing chamber from a lower portion of a sample so as to reduce pressure within a processing chamber. The vacuum pump includes a rotary vane and a fixed vane which are arranged within a case of the vacuum pump and have a plurality of impeller blades in a coaxial manner; an exhausting port for exhausting the gas exhausted from the rotary vane outside the case; and a conducting port arranged along a lower direction of the rotary vane, into which inert gas is conducted, which are provided on a circumference thereof. An MFC (flow rate adjusting device) is arranged between a gas storage unit of the inert gas and the conducting port, for adjusting an amount of the inert gas.
申请公布号 US2008066859(A1) 申请公布日期 2008.03.20
申请号 US20060512124 申请日期 2006.08.30
申请人 KOBAYASHI MICHIAKI;NAKAMURA TSUTOMU;MAKINO AKITAKA 发明人 KOBAYASHI MICHIAKI;NAKAMURA TSUTOMU;MAKINO AKITAKA
分类号 H01L21/306 主分类号 H01L21/306
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