| 摘要 |
PURPOSE:To facilitate production by providing a grade layer, an n-type clad layer, an active layer and a p-type clad layer on a GaAs or GaP substrate in the ternary system by the vapour-phase growing method and fitting ohmic electrodes. CONSTITUTION:N-type GaAs1-xPx 22, Se-added n-type GaAs0.6P0.4 23, Zn-added p-type GaAs0.7P0.3 active layer 24 and Zn-added P-type GaAs0.6P0.4 25 are laminated on n-type GaAs substrate 21 while changing the x value linearly from 0 to 0.4 in the growing direction, and ohmic electrodes 27 and 26 of Au-Ge (10%) and Au-Be (1%) are fitted onto substrate 21 and layer 25. The range of x of the active layer is selected as 0.2<x<=0.4 and 0.4<x<0.9 for the GaAs substrate and the GaP substrate respectively, and the energy gap of clad layers 23 and 25 is selected to be larger than the active layer by a value over 10<2>meV. Thus, a luminius device for visual rays can be obtained easily. |
