| 摘要 |
PURPOSE:To make the finishing thickness uniform and shorten the polishing time by providing previously grooves on the reverse face and finishing the semiconductor wafer into a desired thickness by mechanical polishing when the thickness of the semiconductor wafer is made small by eliminating the reverse face. CONSTITUTION:After many semiconductor elements 2 are formed on one face of Si wafer 1, plural rows of groove 3 are formed laterally and longitudinally on the other face by a dicing saw. At this time, the interval of grooves is defined as a pitch such as 10mm, and grooves are approximately 2mm wide, and the depth is shallower than the final finishing thickness by approximately 10mum. After that, this face is polished mechanically to make the thickness of wafer 1 into a desired one. Thus, polishing materials are distributed uniformly on the surface of wafer 1 at a polishing time, and the finishing precision is improved, and the polishing time is shortened by approximately 30%.
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