METHOD OF MANUFACTURING THIN FILM TRANSISTOR SUBSTRATE

摘要

A method for manufacturing a TFT(Thin Film Transistor) substrate is provided to adjust the composition ratio of etching gas used in the dry etching process of a first photo resist, thereby removing a metal oxide film and polymer residue formed on a metal film for data and preventing the generation of stringer. A method for manufacturing a TFT substrate(110) comprises the following steps of: forming a gate insulating film(130), an active layer(140), and a metal film(150) for data successively on the substrate on which a gate line(122) is formed; forming a first photo resist pattern that a channel forming area(154) has a relatively thin thickness in comparison to a different area on the metal film for the data; performing the first etching of the metal film for the data using the first photo resist pattern; performing the active layer using the first photo resist pattern; performing the dry etching of the first photo resist pattern with gas mixing SF6(Sulphur Hexafluoride) and O2(Oxygen) in the ratio of 1:4 to 1:20 to form a second photo resist pattern(162) of which the channel forming area is removed; and performing the second etching of the metal film for the data using the second photo resist pattern.