| 摘要 |
Methods of fabricating semiconductor devices are disclosed. In a preferred embodiment, a method of fabricating a semiconductor device includes providing a workpiece including a plurality of active area regions defined therein, and forming at least one trench in the workpiece between at least two of the plurality of active area regions. A first insulating material is deposited over the plurality of active area regions and the at least one trench, partially filling the at least one trench with the first insulating material and forming peaks of the first insulating material over the plurality of active area regions. A masking material is formed over the first insulating material in the at least one trench, leaving the peaks of the first insulating material over the plurality of active area regions completely exposed. At least the peaks of the first insulating material are removed from over the plurality of active area regions.
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