发明名称 PHOTOELECTRIC SURFACE
摘要 <p>PURPOSE:To lower the resistance value of a photoelectric surface practically to delay the start of saturation of the photoelectric current dependent upon the increment of light quantity and saturate the photoelectric current with a low cathode voltage by ramifying conductive layer narrow wires on a substrate and forming photoelectric materials on these wires. CONSTITUTION:In the photoelectric tube which is operated by applying a voltage between photoelectric surface 2 and anode 4 by power source 3, conductive layer narrow wires 9 are led out from conductive layer 1 and are ramified into meshes on transparent glass substrate 10. Since conductive layer narrow wires 9 are caused to enter up to the center part of photoelectric surface 2 in this manner, the resistance value of photoelectric surface 2 is lowered practically. As a result, the incident light-photoelectric current characteristic curve is changed as shown in curve 6 from curve 5 obtained in case of no use of conductive layer narrow wires 9, and the photoelectric surface applied voltage-photoelectic current characteristic curve is changed from curve 7 to curve 8, so that a characteristic similar to the low-surface resistance photoelectric surface can be obtained.</p>
申请公布号 JPS54146952(A) 申请公布日期 1979.11.16
申请号 JP19780054537 申请日期 1978.05.10
申请人 HITACHI ELECTRONICS 发明人 SHIIHA ITARU;ENDOU TOORU;TADA KANETOSHI
分类号 H01J43/08;H01J1/34 主分类号 H01J43/08
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