| 摘要 |
<p>A method of making a narrow gate MESFET (65 or 66) including the steps of placing a layered mask (100/110) of nitride (101, 105/102, 106) and polysilicon (103/104) over a channel region (40) for self-aligning in a substrate (10), oxidizing and then removing the polysilicon to reduce the remaining polysilicon width, etching the nitride (105 or 106) to the polysilicon width (D4), oxidizing the substrate (10) where the nitride defines the gate (80 or 90) therein, removing the nitride (105 or 106), and depositing metal (320 or 310) on the gate (80 or 90) to form the MESFET Schottky gat.</p> |
