THYRISTORS

摘要

High voltage thyristors (including triacs) in which the forward and reverse blocking junctions are terminated in passivating material in separate annular moats in the same major surface of the body. The second annular moat extends around the first annular moat and both moats contain passivating dielectric material. A highly-doped surface region is present at the surface between the first and second moats to form a channel stopper region. Annular field-relief electrodes can be added to the structure.