| 摘要 |
PURPOSE:To enable the increase in the area of the second main electrode and the gate electrode and to increase the current capacity of the second main electrode, by forming the gate electrode on the surface of the Si substrate opposite to the surface of the emitter layer providing the second main electrode. CONSTITUTION:On the surface of the N type Si substrate 1 being the N type base region 5, the P type base layer 3 is formed by diffusion, and the P type emitter layer 4 is formed by diffusion at the rear side. Further, at the both ends, the P type separation region 2 is formed by diffusion to enclose the N type base region 5, and on the layer 3, the N type emitter layer 6 is formed by diffusion. Further, at the end of the layers 6 and 3, the first mesa groove 13 is formed, it is covered with the first surface stabilizing glass coating film 14, and the second main electrode 10 is coated on the entire surface of the layer 6. After that, between the region 2 and the layer 4 at the rear side the second mesa groove 15 is made, which reaches the region 5, it is covered with the second glass coating film 16, and at the surface of the layer 4 surrounded with it, the first main electrode 9, and at the surface of the region 2 locating external of it, the gate electrode 11 are respectively attached. |
