发明名称 |
SCHOTTKY BARRIER AMORPHOUS SILICON SOLAR BATTERY |
摘要 |
A Schottky barrier amorphous silicon solar cell incorporating a thin highly doped p-type region of hydrogenated amorphous silicon disposed between a Schottky barrier high work function metal and the intrinsic region of hydrogenated amorphous silicon wherein said high work function metal and said thin highly doped p-type region forms a surface barrier junction with the intrinsic amorphous silicon layer. The thickness and concentration of p-type dopants in said p-type region are selected so that said p-type region is fully ionized by the Schottky barrier high work function metal. The thin highly doped p-type region has been found to increase the open circuit voltage and current of the photovoltaic device. |
申请公布号 |
JPS54143086(A) |
申请公布日期 |
1979.11.07 |
申请号 |
JP19780160894 |
申请日期 |
1978.12.22 |
申请人 |
RCA CORP |
发明人 |
DEBITSUDO EMIRU KAARUSON;KURISUTOFUA ROOMAN RONSUKII |
分类号 |
H01L31/04;H01L31/07 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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