| 摘要 |
<p>PURPOSE:To reduce a forward-voltage drop between a Si base body with a partial N-type surface and an electrode by providing the bonding surface if the base body with an infinite number of grooves with a high surface index than the bonding surface and then by bonding the electrode to the surface via Al. CONSTITUTION:In the adhesion surface of the (111) crystal surface of N-type Si base body 11 where a PN junction is formed, an infinite number of grooves are formed by etching by the use of a solution including 5% of sodium hydroxide as its principal constituent. In order to suppress an increase in forward voltage by stopping a regrowth layer from growing, a n<+>-type layer is formed by diffusion on the surfaces of grooves and Al foil 12 is fitted to the surface and then supported by support electrode 13 of Mo or W. Then, the reverse surface is covered with lag 40 made of graphite, and base bady 11 and electrode 13 are bonded together via fused Al foil 12 by heating. Consequently, grooves with a higher surface index than the original (111) surface are made on the bonding surface of n<+>-type. so that an excellent contact surface can be obtained.</p> |
