| 摘要 |
PURPOSE:To form a highly-precise pattern regardless of its area by controlling exposure to the optimum degree by automatically changing the stay time for an electron beam corresponding to the size of the pattern to be exposed. CONSTITUTION:Beam-stay-time information is stored 16 from central processor 1 via write circuit 13. Position information on an exposure pattern is supplied to scanner 6 via registers 2 and 3, and size information is via registers 4 and 5; and beam 1 is deflected 10 and 11 via amplifiers 7 and 8 respectively. The size information assigns the address of the memory via decoders 14 and 15 to read out 17 the information, thereby setting the stay time to register 18. Basic CP19 is converted and interpolated by the information of register 18 and then supplied to scanner 6; and then, the beam stay time is prolonged corresponding to the number of interpolation and the exposure is quickened automatically corresponding to the size of the pattern to be exposed, so that the reduction of the pattern size due to the adjacent effect of the beam will never occur. |
