发明名称 Process for preparing a polycrystalline diamond body/silicon nitride substrate composite
摘要 A mass of diamond crystals in contact with a mass of eutectiferous silicon-rich alloy and a silicon nitride ceramic substrate are disposed in a container and placed within a pressure transmitting powder medium. Pressure is applied to the powder medium resulting in substantially isostatic pressure being applied to the container and its contents sufficient to dimensionally stabilize the container and its contents. The resulting shaped substantially isostatic system of powder-enveloped container is hot-pressed whereby fluid eutectiferous silicon-rich alloy is produced and infiltrated through the interstices between the diamond crystals and contacts the contacting face of the silicon nitride substrate sufficiently producing, upon cooling, an adherently bonded integral composite.
申请公布号 US4173614(A) 申请公布日期 1979.11.06
申请号 US19780889107 申请日期 1978.03.22
申请人 GENERAL ELECTRIC 发明人 DE VRIES, ROBERT C;LEE, MINYOUNG;SZALA, LAWRENCE E
分类号 B01J3/06;B22F3/15;B23B27/14;B24D18/00;C04B37/00;(IPC1-7):B24D3/08 主分类号 B01J3/06
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