| 摘要 |
PURPOSE:To realize the cost reduction for the solar battery by composing the solar battery with P-type GaAs layer, N-type GaAs layer and N-type AlXGa1-XAs layer each, separating the solar battery into plural units with installation of N<+>-type region at the fixed region and also providing P<+>-type region to secure a serial connection. CONSTITUTION:The solar battery is composed by giving the continuous epitaxial growth to P-type GaAs substrate 1 with N-type AlXGa1-XAs layer 2, P-type GaAs layer 3, N-type GaAs layer 4 and N-type AlXGa1-XAs layer 5 respectively. Then plural units of ohmic electrode 6 contianing a large amount of N-type impurity such as Ge or the like are provided in a belt formation at the fixed area on layer 5, and the impurity in electrode 6 is diffused through the heat treatment to form the isolation region composed of connected N<+>-type region 7a and 7b reaching layer 2. After this, P-type electrode 8 is formed also in a belt formation in connection to electrode 6 to form through the heat treatment the continuous P<+>-type region 9a and 9b reaching layer 3, and a serial connection is given to the isolated regions. Substrate 1 and layer 2 are then removed through etching, thus obtaining a monolithic thin film solar battery. |
