| 摘要 |
PURPOSE:To reduce the occupied area of the memory cell and to increase the degree of integration by utilizing the read or write selection line of the adjacent memory cell as the power line of the earth or the like. CONSTITUTION:Both the read and write selection lines are always ''0'' when the memory cell is not selected, and thus the read or write selection line of the nonselected memory cell which is adjacent to the selected memory cell can be utilized as the earth line. In case the information written to node 12 of the memory circuit is ''1'', FETM12 also conducts. As a result, the charge of data line A leaks out to R2 of the 2nd line memory cell prescribed by read and write selection lines R2 and W2 via FETM12 and M13. As described above, both the read and write selection lines of the nonselected line are always ''0'' possessing the path leading to the earth pontential via MOSFET of line decoder circuit 4. Thus, the charge of data line A leaks out to the earth potential and then turns to level ''0''. |
