Photolithographic masks and fabrication method thereof

摘要

A photolithographic mask is provided. The photolithographic mask includes a substrate having a first surface configured as a light incidence plane of an exposure light and a second surface. The photolithographic mask also includes a plurality of scattering centers functioning as a refractive index disturbance inside the substrate. Further, the photolithographic mask includes a plurality of mask patterns on the second surface of the substrate.

主权项

1. A photolithographic mask, comprising:
a first substrate including a first plurality of scattering centers therein, wherein the first plurality of scattering centers are exposed at a top surface of the first substrate; a plurality of mask patterns on a bottom surface of the first substrate; and a second substrate bonded on the top surface of the first substrate to cover the first plurality of scattering centers, wherein: the second substrate has a top surface configured as a light incidence surface in a photolithographic exposure process, and the first plurality of scattering centers are functioned as a refractive index disturbance in the bonded substrate.