| 摘要 |
PURPOSE:To enable production without deterioration of activity of ion exchange substance, enzyme or the like, elongate the life, and widen the linear range, by providing a chemical selective layer supported by Japanese lacquer in the gate part of FET type chemically responding element. CONSTITUTION:A source region 42 and a drain region 43 are provided in a p-type Si substrate 41, and SiO2 layer 44, lead wire parts 45, 46, and Si3N4 film 47 on channel region between regions 42 and 43 are formed thereon. An insulation film 49 is provided on the outer surface, except for the film 47. Such FET type chemically responding element is fitted downwards to disc, and is caused to contact with a mixture solution of Japanese lacquer and chemical selective substance such as Valinomycin while being rotated at low speed, and is then pulled up. After the film thickness of the mixture solution deposited by high speed rotation reaches the specified thickness, the Japanese lacquer is solidified under low speed rotating state, so that a chemical selective film 48 may be formed in the gate part. |
