发明名称 DISPOSITIF POUR L'APPLICATION A L'AIDE D'IONS-PLASMA, DE REVETEMENTS SUR DES ARTICLES
摘要 The device can be used for applying thin layers of metals, semiconductors and dielectrics to the surface of various products. The device contains a vacuum chamber (1) in which a discharge chamber (5) having at least one slit-shaped opening (6) in one of its walls is arranged. The plasma flow is generated by an electrical field between an anode (15) and an incandescent cathode (9) which are accommodated in the discharge chamber (5) in such a way that the incandescent cathode (9) is positioned opposite the slit-shaped opening (6) of the discharge chamber (5). The magnet system (21) generates a magnetic field which is directed across the incandescent cathode (9) and the slit-shaped opening (6) perpendicular to the electrical field between the anode (15) and the incandescent cathode (9). A target (19) and a holder (20) for the products to be coated are arranged at different sides of the plasma flow which emerges from the slit-shaped opening (6). In a device of this type the discharge zone is spatially separated from the sputtering zone. This extends the service life of the cathode. <IMAGE>
申请公布号 FR2421957(A1) 申请公布日期 1979.11.02
申请号 FR19780000955 申请日期 1978.01.13
申请人 KOVALSKY GEORGY 发明人
分类号 B01J3/00;C23C14/46;H01J37/34;(IPC1-7):C23C15/00;H05H1/02 主分类号 B01J3/00
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