| 摘要 |
PURPOSE:To perform definitely the operation of a read/write memory cell using a FF circuit, by connecting the emitter, base and collector of a bipolar transistor to the source, drain and date of a MOS transistor respectively. CONSTITUTION:Once power is supplied to power terminal 1, NPN transistor T1 conducts first and the collector of T1 and the gate of MOS transistor T2 both becomes lower in potential while T2 remains unconductive, so that T1 will hold its base potential at a high level. Then, either one of outputs of the collector of T1 of ''0'' and of the drain of T2 of ''1'' is extracted to form a ROM. Once a low- level signal is inputted to terminal 2, on the other hand, T1 beomes unconductive and the collector potential of T1 while the gate potential of T2 reaches a high level; as a result, T2 conducts and the low level of terminal 2 is held, so that the function of a RAM can be obtained. |
