| 摘要 |
FIELD: instrument making.SUBSTANCE: invention can be used for production of electronic components of microcircuits. Invention consists in that a cheap light transistor is made in form of bipolar transistor of n-p-n structure and p-n-junction, on which electrons from n zone to p zone is formed in form of light-emitting and n-p-junction, on which electrons from p zone to n zone in form of photo-transducer, collector, emitter and base are made in form of mirror metal electrodes.EFFECT: technical result is increase in efficiency of bipolar transistors in pulse mode.1 cl, 1 dwg |
