发明名称 Photonic device structure and fabrication method thereof
摘要 Various embodiments of a photonic device and fabrication method thereof are described herein. A device may include a substrate, a bottom contact layer, a current confinement layer, an intrinsic layer, an absorption layer, and a top contact layer. The bottom contact layer may be of a first polarity and may be disposed on the substrate. The current confinement layer may be disposed on the bottom contact layer. The intrinsic layer may be disposed on the current confinement layer. The absorption layer may be disposed on the intrinsic layer. The top contact layer may be of a second polarity and may be disposed on the absorption layer. The second polarity is opposite to the first polarity.
申请公布号 US9373938(B2) 申请公布日期 2016.06.21
申请号 US201514705188 申请日期 2015.05.06
申请人 SIFOTONICS TECHNOLOGIES CO., LTD. 发明人 Huang Mengyuan;Cai Pengfei;Wang Liangbo;Li Su;Chen Wang;Hong Ching-yin;Pan Dong
分类号 H01S5/00;H01S5/20;H01S5/02;H01S5/30;H01L31/0352;H01L31/105;H01S5/183;H01S5/22 主分类号 H01S5/00
代理机构 Han IP Corporation 代理人 Han IP Corporation ;Han Andy M.
主权项 1. A device, comprising: a substrate; a bottom contact layer of a first polarity and disposed on the substrate; a current confinement layer disposed on the bottom contact layer; an intrinsic layer disposed on the current confinement layer; an active layer disposed on the intrinsic layer; and a top contact layer of a second polarity and disposed on the active layer, the second polarity opposite to the first polarity.
地址 Woburn MA US