Optoelectronic semiconductor chip

摘要

An optoelectronic semiconductor chip includes a semiconductor body of semiconductor material, a p-contact layer and an n-contact layer. The semiconductor body includes an active layer intended for generating radiation. The semiconductor body includes a p-side and an n-side, between which the active layer is arranged. The p-contact layer is intended for electrical contacting the p-side. The n-contact layer is intended for electrical contacting the n-side 1b. The n-contact layer contains a TCO layer and a mirror layer, the TCO-layer being arranged between the n-side of the semiconductor body and the mirror layer.

主权项

1. An optoelectronic semiconductor chip comprising:
a semiconductor body of semiconductor material, wherein the semiconductor body comprises an active layer configured to generate radiation, and wherein the semiconductor body comprises a p-side and an n-side, the active layer being arranged between the p-side and the n-side; a p-contact layer, wherein the p-contact layer electrically contacts the p-side of the semiconductor body; and an n-contact layer, wherein the n-contact layer electrically contacts the n-side of the semiconductor body, wherein the n-contact layer contains a TCO layer and a mirror layer, wherein the mirror layer contains silver, wherein the n-contact layer passes through the p-side via a hole and ends in the n-side of the semiconductor body, and wherein the TCO layer is arranged in the hole between the n-side of the semiconductor body and the mirror layer.