Transistor with bonded gate dielectric

摘要

A method for forming a semiconductor device includes forming a dielectric layer on a first substrate and wafer bonding the dielectric layer of the first substrate to a second substrate including SiC with a passivating layer formed on the SiC. A portion of the first substrate is removed from a side opposite the dielectric layer. The dielectric layer is patterned to form a gate dielectric for a field effect transistor formed on the second substrate.

主权项

1. A method for forming a semiconductor device, comprising:
oxidizing a first substrate, including a material other than SiC, wherein the oxidizing forms a dielectric layer; forming source and drain regions in a second substrate prior to wafer bonding; forming a passivating layer on the second substrate by oxidizing the second substrate; wafer bonding the dielectric layer of the first substrate directly on the passivating layer of the second substrate, the second substrate including SiC with the passivating layer formed on the SiC; removing at least a portion of the first substrate from a side opposite the dielectric layer; and patterning the dielectric layer to form a gate dielectric for a field effect transistor formed on the second substrate.