Semiconductor device and method for manufacturing same and semiconductor substrate

摘要

According to one embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type made of silicon carbide; and a second semiconductor layer of a second conductivity type made of silicon carbide, placed in junction with the first semiconductor layer, and containing an electrically inactive element.

主权项

1. A semiconductor device comprising:
a first semiconductor layer of a first conductivity type made of silicon carbide; and a second semiconductor layer of a second conductivity type made of silicon carbide, the second semiconductor layer being provided on the first semiconductor layer, being placed injunction with the first semiconductor layer, and including an electrically inactive element contained in an upper portion of the second semiconductor layer, a basal plane dislocation being generated at an upper surface of the upper portion, and terminated in the upper portion.