发明名称 Thin film transistor and method for repairing the same, GOA circuit and a display device
摘要 The present disclosure provides a thin film transistor and method for repairing the same, GOA circuit and a display device, which aims to solve the problem that the source and/or drain of thin film transistor can not be repaired once it is short circuited with other conductive functional layers. The thin film transistor comprises a source, a drain, and a gate. The source and the drain have a comb shape and respectively comprise a plurality of comb-tooth portions and comb-handle portions for connecting each comb-tooth portion, and the gate is insulated from the source and the drain. Comb-tooth portions of the source are arranged by an interval with respect to comb-tooth portions of the drain. The comb-handle portion of the source and the gate do not overlap in their projections in the vertical direction, and the comb-handle portion of the drain and the gate do not overlap in their projections in the vertical direction.
申请公布号 US9373642(B2) 申请公布日期 2016.06.21
申请号 US201414526356 申请日期 2014.10.28
申请人 BOE TECHNOLOGY GROUP CO., LTD;BEIJING BOE DISPLAY TECHNOLOGY CO., LTD 发明人 Mao Guoqi;Chen Xi;Su Shengyu;Zhou Ranyi
分类号 H01L27/12;H01L29/423;H01L29/417 主分类号 H01L27/12
代理机构 Blakely Sokoloff Taylor & Zafman LLP 代理人 Blakely Sokoloff Taylor & Zafman LLP
主权项 1. A thin film transistor, comprising a source, a drain, and a gate, the source and the drain having a comb shape and respectively comprising a plurality of comb-tooth portions and comb-handle portions for connecting each comb-tooth portion, the gate being insulated from the source and the drain, and an active layer below the source and the drain, wherein comb-tooth portions of the source are arranged by an interval with respect to comb-tooth portions of the drain, and wherein the comb-handle portion of the source and the gate do not overlap in their projections in the vertical direction, and the comb-handle portion of the drain and the gate do not overlap in their projections in the vertical direction, wherein a projection of the active layer in the vertical direction is located within a projection of the gate in the vertical direction, and wherein two edges of the active layer at both sides with respect to its extending direction extend to ends of the comb-tooth portions of the source and ends of the comb-tooth portions of the drain, respectively.
地址 Beijing CN