Semiconductor memory devices and methods of fabricating the same

摘要

A semiconductor memory device may include stacks arranged in a first direction and vertical channel structures provided through the stacks. Each of the stacks may include gate electrodes and insulating layers alternately stacked on a substrate. Each of the vertical channel structures may include a semiconductor pattern connected to the substrate and a vertical channel pattern connected to the semiconductor pattern. Each of the semiconductor patterns may have a recessed sidewall, and the semiconductor patterns may have minimum widths different from each other.

主权项

1. A semiconductor memory device, comprising:
stacks separated from each other in a first direction by a trench, each of the stacks comprising insulating layers and gate electrodes alternately and repeatedly stacked on a substrate; first and second semiconductor patterns arranged along the first direction, each of the first and second semiconductor patterns being inserted in a lower portion of each of the stacks and being connected to the substrate; first and second vertical channel patterns in each of the stacks on the respective first and second semiconductor patterns; and a common source plug in the trench, wherein the first semiconductor pattern is closer to the trench than the second semiconductor pattern, and wherein a minimum width of the first semiconductor pattern is less than that of the second semiconductor pattern.